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 Ordering number : ENN7081
2SK2625LS
N-Channel Silicon MOSFET
2SK2625LS
Ultrahigh-Speed Switching Applications
Preliminary Features
* *
Package Dimensions
unit : mm 2078C
[2SK2625LS]
10.0 3.2
3.5 7.2
Low ON-resistance. Low Qg.
4.5
2.8
16.1
16.0
3.6
0.9
1.2
14.0
1.2
0.75
0.7
123
2.4
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Tc=25C Conditions
1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI(LS)
Ratings 600 30 4 16 2.0 30 150 --55 to +150 Unit V V A A W W C C
2.55
2.55
Electrical Characteristics at Ta=25C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on) Conditions ID=1mA, VGS=0 VDS=600V, VGS=0 VGS=30V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=2.5A ID=2.5A, VGS=15V Ratings min 600 1.0 100 3.5 1.5 3.0 1.5 2.0 5.5 typ max Unit V mA nA V S
Marking : K2625
0.6
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O2501 TS IM TA-3475 No.7081-1/4
2SK2625LS
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Symbol Ciss Coss Crss Qg td(on) tr td(off) tf VSD Conditions VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=200V, ID=5A, VGS=10V See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. IS=5A, VGS=0 Ratings min typ 700 220 110 20 20 20 50 25 0.88 1.2 max Unit pF pF pF nC ns ns ns ns V
Switching Time Test Circuit
VDD=200V PW=1s D.C.0.5% VGS=15V ID=2.5A RL=80.0
D
VOUT
G
P.G
RGS=50
2SK2625LS
S
6
ID -- VDS
1 0V
Drain Current, ID -- A
8 7
ID -- VGS
VDS=10V
5
Tc= --25C
25C
Drain Current, ID -- A
4
15
V
8V
6 5 4 3 2 1 0
3
75C
Tc=75
5
2
C
0
7V
1
VGS=6V
0 0 1 2 3 4 5 6 7 8 9 10
25 C
--25C
10
15
20 IT03650
Drain-to-Source Voltage, VDS -- V
4.0
IT03649 3.5
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Tc
Tc=25C
Static Drain-to-Source On-State Resistance, RDS(on) --
3.5
Static Drain-to-Source On-State Resistance, RDS(on) --
3.0
3.0
2.5
ID=1A
2.5
2.0
5A
2.0
= ID
1.5
A 2.5
,V
=1 GS
0V
.5 =2 ID
A,
V
=1 GS
5V
2.5A
1.5
1.0
1.0 4 6 8 10 12 14 16 18 20
0.5 --50
--25
0
25
50
75
100
125
150
Gate-to-Source Voltage, VGS -- V
IT03651
Case Temperature, Tc -- C
IT03652
No.7081-2/4
2SK2625LS
10
yfs -- ID
VDS=10V
6
VGS(off) -- Tc
VDS=10V ID=1mA
Forward Transfer Admittance, yfs -- S
7 5 3 2
Cutoff Voltage, VGS(off) -- V
5
1.0 7 5 3 2 0.1 2 3
C -25 =Tc C 75
4
25
C
3
5
7
1.0
2
3
5
7
2 --50
--25
0
25
50
75
100
125
150
Drain Current, ID -- A
100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 0
IT03653 3
Case Temperature, Tc -- C
IT03654
IF -- VSD
Ciss, Coss, Crss -- VDS
f=1MHz
VGS=0
2
Forward Current, IF -- A
1000
Ciss, Coss, Crss -- pF
7 5 3 2
Ciss
Coss
75 C 25 C --25 C
Crss
100 7 5 3
0.3
Tc=
0.6
0.9
1.2
1.5 IT03655 3 2 10 7 5
0
5
10
15
20
25
30 IT03656
Diode Forward Voltage, VSD -- V
100
SW Time -- ID
Drain-to-Source Voltage, VDS -- V
ASO
Switching Time, SW Time -- ns
7
VDD=200V VGS=10V
IDP=16A ID=4A
td (off)
Drain Current, ID -- A
5
<1s 10 s 10 0 s
3 2 1.0 7 5 3 2 0.1 7 5 3 2
1m
DC
Operation in this area is limited by RDS(on).
tf
3
Op
10 ms 0m s
10
s
2
td(on)
tr
era
tio
n
10 3 5 7 1.0 2 3 5 7
0.01
Tc=25C Single Pulse
2 3 5 7 10 2 3 5 7 100 2 3
Drain Current, ID -- A
2.5
10 IT03657
1.0
PD -- Ta
Drain-to-Source Voltage, VDS -- V
35
5 7 1000 IT03658
PD -- Tc
Allowable Power Dissipation, PD -- W
Allowable Power Dissipation, PD -- W
0 20 40 60 80 100 120 140 160
30
2.0
25
1.5
20
1.0
15
10
0.5
5 0 0 20 40 60 80 100 120 140 160
0
Ambient Temperature, Ta -- C
IT03660
Case Temperature, Tc -- C
IT03659
No.7081-3/4
2SK2625LS
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 2001. Specifications and information herein are subject to change without notice.
PS No.7081-4/4


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